+420 54114 9207 | 
nano@ceitec.vutbr.cz
chemical vapour deposition system going to very high deposition temperatures dedicated to the deposition of carbon nanomaterials, possibilities of plasma enhancement by discharges of different frequency (including their regular switching)
| RF CCP 13.56 MHz plasma source 600 W | |
|---|---|
| high frequency 50–400 kHz plasma source 300 WRF substrate biasing | |
| grounded substrate | |
| sample size up to 6’’ | |
| loadlock | |
| substrate temperature 50 to 1000 °C | |
| gases: | Ar2, CH4, C2H2, H2 |
| Materials | deposition of carbon nanotubes and graphene |
